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| SOT23 NPN SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR ISSUE 1 - NOVEMBER 1997 FEATURES Very low equivalent on-resistance; RCE(sat)=140m at 1.25A COMPLEMENTARY TYPE - PARTMARKING DETAIL - FMMTL718 L68 FMMTL618 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICM IB Ptot Tj:Tstg VALUE 60 20 5 1.25 4 200 500 -55 to +150 UNIT V V V A A mA mW C FMMTL618 ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO MIN. 60 20 5 TYP. 105 30 8.5 10 10 10 18 80 130 170 260 1000 850 200 300 250 200 100 50 400 440 400 300 190 100 195 9 72 388 12 MHz pF ns ns 35 160 200 280 350 1100 1000 MAX. UNIT V V V nA nA nA mV mV mV mV mV mV mV CONDITIONS. IC=100A IC=10mA* IE=100A VCB=16V VEB=4V VCE=16V IC=100mA, IB=10mA* IC=500mA, IB=25mA* IC=1A, IB=100mA* IC=1.25A, IB=100mA* IC=2A, IB=200mA* IC=1.25A, IB=100mA* IC=1.25A, VCE=2V* IC=10mA, VCE=2V IC=200mA, VCE=2V* IC=500mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* IC=3A, VCE=2V* IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz IC=1A, VCC=10V IB1=-IB2=10mA Collector Cut-Off Current ICBO Emitter Cut-Off Current IEBO VCE(sat) Collector Cut-Off Current ICES Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage Static Forward Current Transfer Ratio VBE(sat) VBE(on) hFE Transition Frequency Collector-Base Breakdown Voltage Switching times fT Cobo ton toff *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% FMMTL618 TYPICAL CHARACTERISTICS +25C IC/IB=10 300m 300m VCE(sat) - (V) VCE(sat) - (V) 200m IC/IB=10 IC/IB=20 IC/IB=50 200m -55C +25C +100C 100m 100m 0 1mA 0 10mA 100mA 1A 10A 1m 10m 100m 1A 10A IC - Collector Current (A) IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC 600 VCE=2V 1.0 0.8 IC/IB=10 hFE - Typical Gain VBE(sat) - (V) 0.6 0.4 0.2 0 1mA -55C +25C +100C 300 +100C +25C -55C 0 1mA 10mA 100mA 1A 10A 10mA 100mA 1A 10A IC - Collector Current (A) IC - Collector Current (A) hFE v IC VBE(sat) v IC 1.0 VCE=2V 10A 0.8 IC - Collector Current (A) VBE(on) - (V) 1A DC 1s 100ms 10ms 1ms 100us 0.6 0.4 0.2 0 1mA -55C +25C +100C 100m 10mA 100mA 1A 10A 10m 100m 1 10 100 IC - Collector Current (A) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area |
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